Page 65 - ebook PdP FET
P. 65
TABLE OF CONTENTS
OPERATION OF
CHAPTER 4
CHAPTER 3
Source : https://feng.stafpu.bu.edu.eg
When gate is made positive (VGS is positive), it attracts free
electron into the p-region. The free electrons combine with the
holes next to the SiO2 layer.
If VGS is positive enough, all the holes touching the SiO2 layer
are filled and free electrons begin to flow from the source to
the drain. CHAPTER 2
The effect is the same as creating a thin layer of n-type material
(inducing a thin n-channel) adjacent to the SiO2 layer.
Thus, the E-MOSFET is turned ON and drain current (ID) starts
CHAPTER 1
flowing from the source to drain.
58
